Nonequilibrium Effects and Self Heating in Single Electron Coulomb Blockade Devices

We present a comprehensive investigation of nonequilibrium effects and self heating in single electron transfer devices based primarily on the Coulomb blockade effect. During an electron trapping process, a hot electron may be deposited in a quantum dot or metal island, with an extra energy usually on the order of the Coulomb charging energy, which is much higher than the temperature in typical experiments. The hot electron may relax through three channels: tunneling back and forth to the feeding lead (or island), emitting phonons, and exciting background electrons. Depending on the magnitudes of the rates in the latter two channels relative to the device operation frequency and to each other, the system may be in one of three different regimes: equilibrium, non-equilibrium, and self heating (partial equilibrium). In the quilibrium regime, a hot electron fully gives up its energy to phonons within a pump cycle. In the nonequilibrium regime, the relaxation is via tunneling with a distribution of characteristic rates; the approach to equilibrium goes like a power law of time (frequency) instead of an exponential. This channel is plagued completely in the continuum limit of the single electron levels. In the self heating regime, the hot electron thermalizes quickly with background electrons, whose